advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 35v good thermal performance r ds(on) 27m fast switching performance i d 8.6a p-ch bv dss -35v r ds(on) 45m description i d -6.7a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage 35 -35 v v gs gate-source voltage 20 20 v i d @t a =25 continuous drain current 3 8.6 -6.7 a i d @t a =70 continuous drain current 3 6.9 -5.4 a i dm pulsed drain current 1 50 -50 a p d @t a =25 total power dissipation w linear derating factor w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value units rthj-c thermal resistance junction-case max. 8 /w rthj-a thermal resistance junction-ambient 3 max. 40 /w data and specifications subject to change without notice parameter 200627072-1/7 thermal data AP4511GH-A rohs-compliant product 3.125 0.025 the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. g2 d2 s2 g1 d1 s1 s1 to-252-4l g1 s2 g2 d1/d2
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 35 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.02 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =8a - - 27 m v gs =4.5v, i d =5a - - 36 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.8 - 2.5 v g fs forward transconductance v ds =10v, i d =8a - 13 - s i dss drain-source leakage current (t j =25 o c) v ds =35v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =28v, v gs =0v - - 25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =8a - 11 18 nc q gs gate-source charge v ds =28v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =18v - 12 - ns t r rise time i d =1a - 7 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 22 - ns t f fall time r d =18 -6- ns c iss input capacitance v gs =0v - 830 1330 pf c oss output capacitance v ds =25v - 150 - pf c rss reverse transfer capacitance f=1.0mhz - 110 - pf r g gate resistance f=1.0mhz - 1.1 1.7 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =8a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =8a, v gs =0v - 18 - ns q rr reverse recovery charge di/dt=100a/s - 12 - nc AP4511GH-A 2/7
p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -35 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : ,i d =-1ma - -0.02 - v/ : r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-6a - - 45 m v gs =-4.5v, i d =-4a - - 70 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.8 - -2.5 v g fs forward transconductance v ds =-10v, i d =-6a - 10 - s i dss drain-source leakage current (t j =25 o c) v ds =-35v, v gs =0v - - -1 ua drain-source leakage current (t j =150 o c) v ds =-28v, v gs =0v - - -25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =-6a - 10 19 nc q gs gate-source charge v ds =-28v - 2 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =-18v - 10 - ns t r rise time i d =-1a - 6 - ns t d(off) turn-off delay time r g =3.3 ,v gs =-10v - 26 - ns t f fall time r d =18 -7- ns c iss input capacitance v gs =0v - 690 1100 pf c oss output capacitance v ds =-25v - 165 - pf c rss reverse transfer capacitance f=1.0mhz - 130 - pf r g gate resistance f=1.0mhz - 5 7.5 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-6a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-6a, v gs =0v - 20 - ns q rr reverse recovery charge di/dt=-100a/s - 12 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.n-ch , p-ch are same , mounted on 2oz fr4 board t 10s. this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. 3/7 AP4511GH-A this product has been qualified for consumer market. applications or uses as criterial component in life support
n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4/7 AP4511GH-A 0 10 20 30 40 50 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 2 4 6 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 10 20 30 40 50 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 18 22 26 30 34 38 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =5a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =8a v g =10v 0.5 0.8 1.1 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 5/7 AP4511GH-A q v g 4.5v q gs q gd q g charge 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 10 20 30 40 50 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s 10s t a =25 o c single pulse 0 2 4 6 8 10 12 14 0 5 10 15 20 25 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =8a v ds = 28v 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a rthja=75 : /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6/7 AP4511GH-A 30 40 50 60 70 246810 -v gs ,gate-to-source voltage (v) r ds(on) (m ) i d =-4a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-6a v g = - 10v 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 10 20 30 40 50 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 0 10 20 30 40 50 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c = 150 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c
p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 7/7 AP4511GH-A q v g -4.5v q gs q gd q g charge 0 10 20 30 40 50 02468 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds =-5v 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms 1s 10s t a =25 o c single pulse 100 1000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 4 8 12 16 0 5 10 15 20 25 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-6a v ds = - 28v 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a rthja=75 : /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
package outline : to-252(4l) millimeters min nom max a 6.40 6.6 6.80 b 5.2 5.35 5.50 c 9.40 9.80 10.20 d 2.40 2.70 3.00 p s 0.50 0.65 0.80 e3 e3 3.50 4.00 4.50 r 0.80 1.00 1.20 g 0.40 0.50 0.60 h 2.20 2.30 2.40 j 0.45 0.50 0.55 k 0.00 0.075 0.15 l 0.90 1.20 1.50 m 5.40 5.60 5.80 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252(4l) symbols 1.27 ref. advanced power electronics corp. a b c m d h j k l part number package code xxxxgh ywwsss date code (ywwsss) y last digit of the year ww week sss sequence logo g s p r meet rohs requirement
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